AP160N04P Datasheet and Replacement
Type Designator: AP160N04P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1119 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
AP160N04P substitution
AP160N04P Datasheet (PDF)
ap160n04p ap160n04t.pdf
AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS DR
ap160n08p ap160n08t.pdf
AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS DR
ap160n10p ap160n10t.pdf
AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS DR
Datasheet: AP12N40F , AP12N40P , AP12N65F , AP12N65P , AP150N03P , AP150N03T , AP150N10P , AP150N10T , P0903BDG , AP160N04T , AP160N08P , AP160N08T , AP160N10P , AP160N10T , AP180N03P , AP180N03T , AP180N08P .
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