AP160N04T Datasheet and Replacement. Cross Reference Search

AP160N04T Datasheet (PDF)

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AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS DR

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AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS DR

8.1. Size:1580K cn apm
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AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS DR

Datasheet: AP12N40P , AP12N65F , AP12N65P , AP150N03P , AP150N03T , AP150N10P , AP150N10T , AP160N04P , EMB04N03H , AP160N08P , AP160N08T , AP160N10P , AP160N10T , AP180N03P , AP180N03T , AP180N08P , AP180N08T .