AP160N10T Datasheet: MOSFET, N-Ch, 100V, 160A. Full specification with pinout and replacement list

AP160N10T Datasheet. Specs and Replacement

Type Designator: AP160N10T 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

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AP160N10T datasheet

..1. Size:1580K cn apm
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AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS D R ... See More ⇒

8.1. Size:1760K cn apm
ap160n08p ap160n08t.pdf pdf_icon

AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS D R ... See More ⇒

8.2. Size:1553K cn apm
ap160n04p ap160n04t.pdf pdf_icon

AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS D R ... See More ⇒

9.1. Size:1320K allpower
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