AP30N06P MOSFET Datasheet: N-Ch, 60V, 30A. Full specification with pinout and replacement list

AP30N06P Specs and Replacement

Type Designator: AP30N06P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.6 nS

Cossⓘ - Output Capacitance: 65 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO220

AP30N06P substitution

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AP30N06P datasheet

..1. Size:1645K cn apm
ap30n06p ap30n06t.pdf pdf_icon

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒

7.1. Size:1427K cn apm
ap30n06df.pdf pdf_icon

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒

7.2. Size:1476K cn apm
ap30n06y.pdf pdf_icon

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒

7.3. Size:1207K cn apm
ap30n06d.pdf pdf_icon

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R ... See More ⇒

Detailed specifications: AP18N20D , AP18N20Y , AP190N15P , AP190N15T , AP200N12P , AP200N12T , AP20N65F , AP20N65P , IRF840 , AP30N06T , AP40N20P , AP40N20T , AP45P06F , AP45P06P , AP45P06T , AP4N65D , AP4N65Y .