AP45P06T Datasheet. Specs and Replacement

Type Designator: AP45P06T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.6 nS

Cossⓘ - Output Capacitance: 224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO263

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AP45P06T datasheet

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 ap45p06f ap45p06p ap45p06t.pdf pdf_icon

AP45P06T

AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒

 7.1. Size:1659K  cn apm
 ap45p06d.pdf pdf_icon

AP45P06T

AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒

 7.2. Size:1635K  cn apm
 ap45p06nf.pdf pdf_icon

AP45P06T

AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒

Detailed specifications: AP20N65F, AP20N65P, AP30N06P, AP30N06T, AP40N20P, AP40N20T, AP45P06F, AP45P06P, IRFB4110, AP4N65D, AP4N65Y, AP4N65F, AP4N65P, AP50N06BD, AP50N06BY, AP50N06P, AP50N06T

Keywords - AP45P06T MOSFET specs

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