AP50N06BY MOSFET Datasheet: N-Ch, 60V, 50A. Full specification with pinout and replacement list

AP50N06BY Specs and Replacement

Type Designator: AP50N06BY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 115 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO251

AP50N06BY substitution

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AP50N06BY datasheet

..1. Size:1589K cn apm
ap50n06bd ap50n06by.pdf pdf_icon

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R ... See More ⇒

7.1. Size:2029K allpower
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7.2. Size:2440K cn apm
ap50n06nf.pdf pdf_icon

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

7.3. Size:824K cn apm
ap50n06p ap50n06t.pdf pdf_icon

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒