All MOSFET. AP50P06P Datasheet

 

AP50P06P Datasheet and Replacement


   Type Designator: AP50P06P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 86.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220
 

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AP50P06P Datasheet (PDF)

 ..1. Size:1575K  cn apm
 ap50p06p ap50p06t.pdf pdf_icon

AP50P06P

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS DR

 8.1. Size:2802K  cn apm
 ap50p02df.pdf pdf_icon

AP50P06P

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D6.8m) R

 8.2. Size:1281K  cn apm
 ap50p03d.pdf pdf_icon

AP50P06P

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

 8.3. Size:1388K  cn apm
 ap50p03df.pdf pdf_icon

AP50P06P

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS DR

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Datasheet: AP4N65D , AP4N65Y , AP4N65F , AP4N65P , AP50N06BD , AP50N06BY , AP50N06P , AP50N06T , IRFB4115 , AP50P06T , AP5G03S , AP5G03DF , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T .

Keywords - AP50P06P MOSFET datasheet

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