All MOSFET. AP7N65Y Datasheet

 

AP7N65Y Datasheet and Replacement


   Type Designator: AP7N65Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO251
 

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AP7N65Y Datasheet (PDF)

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AP7N65Y

AP7N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP7N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge

 8.1. Size:1769K  cn apm
 ap7n65f ap7n65p.pdf pdf_icon

AP7N65Y

AP7N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge

Datasheet: AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P , AP70P03P , AP70P03T , AP7N65D , SKD502T , AP7N65F , AP7N65P , AP80N07P , AP80N07T , AP80N10P , AP80N10T , AP80P06P , AP80P06T .

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