AP80N07T Datasheet and Replacement
Type Designator: AP80N07T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 103
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 80
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 35
nC
tr ⓘ - Rise Time: 90
nS
Cossⓘ -
Output Capacitance: 267
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
AP80N07T Datasheet (PDF)
..1. Size:1548K cn apm
ap80n07p ap80n07t.pdf 
AP80N07PIT 68V N-Channel Enhancement Mode MOSFET Description The AP80N07P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR
7.1. Size:1395K cn apm
ap80n07f.pdf
AP80N07F 68V N-Channel Enhancement Mode MOSFET Description The AP80N07F uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR
7.2. Size:1459K cn apm
ap80n07d.pdf
AP80N07D 68V N-Channel Enhancement Mode MOSFET Description The AP80N07D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR
8.3. Size:175K ape
ap80n03gp.pdf
AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low
8.4. Size:1135K cn apm
ap80n02nf.pdf
AP80N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80A DS DR
8.5. Size:2631K cn apm
ap80n06d.pdf
AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS DR
8.6. Size:2440K cn apm
ap80n06nf.pdf
AP80N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP80N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80A DS DR
8.7. Size:1838K cn apm
ap80n03df.pdf
AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR
8.8. Size:1216K cn apm
ap80n03d.pdf
AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS DR
8.9. Size:1407K cn apm
ap80n04df.pdf
AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR
8.10. Size:2217K cn apm
ap80n02df.pdf
AP80N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80 A DS DR
8.11. Size:1583K cn apm
ap80n03nf.pdf
AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR
8.12. Size:1651K cn apm
ap80n04d.pdf
AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR
8.13. Size:3601K cn apm
ap80n08nf.pdf
AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR
8.14. Size:2412K cn apm
ap80n08d.pdf
AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR
Datasheet: AP60N03P
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