AP80N10T Datasheet and Replacement
Type Designator: AP80N10T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 107
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 80
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 28.9
nC
tr ⓘ - Rise Time: 5.2
nS
Cossⓘ -
Output Capacitance: 321.7
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
AP80N10T Datasheet (PDF)
..1. Size:1599K cn apm
ap80n10p ap80n10t.pdf 
AP80N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP80N10P/T uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =80A DS DR
9.3. Size:175K ape
ap80n03gp.pdf
AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low
9.4. Size:95K ape
ap80n30w.pdf
AP80N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36AGSDescriptionAP80N30 from APEC provide the designer with the best combination offast switching, low on-resistance and cost-effectiveness.GThe TO-3P package is
9.5. Size:1395K cn apm
ap80n07f.pdf
AP80N07F 68V N-Channel Enhancement Mode MOSFET Description The AP80N07F uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR
9.6. Size:1135K cn apm
ap80n02nf.pdf
AP80N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80A DS DR
9.7. Size:1548K cn apm
ap80n07p ap80n07t.pdf
AP80N07PIT 68V N-Channel Enhancement Mode MOSFET Description The AP80N07P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR
9.8. Size:2631K cn apm
ap80n06d.pdf
AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS DR
9.9. Size:1459K cn apm
ap80n07d.pdf
AP80N07D 68V N-Channel Enhancement Mode MOSFET Description The AP80N07D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR
9.10. Size:2440K cn apm
ap80n06nf.pdf
AP80N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP80N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80A DS DR
9.11. Size:1838K cn apm
ap80n03df.pdf
AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR
9.12. Size:1216K cn apm
ap80n03d.pdf
AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS DR
9.13. Size:1407K cn apm
ap80n04df.pdf
AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR
9.14. Size:2217K cn apm
ap80n02df.pdf
AP80N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80 A DS DR
9.15. Size:1583K cn apm
ap80n03nf.pdf
AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR
9.16. Size:1651K cn apm
ap80n04d.pdf
AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR
9.17. Size:3601K cn apm
ap80n08nf.pdf
AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR
9.18. Size:2412K cn apm
ap80n08d.pdf
AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR
Datasheet: AP70P03T
, AP7N65D
, AP7N65Y
, AP7N65F
, AP7N65P
, AP80N07P
, AP80N07T
, AP80N10P
, 12N60
, AP80P06P
, AP80P06T
, AP80P10P
, AP80P10T
, AP85N08BP
, AP85N08BT
, AP90N06P
, AP90N06T
.
History: AP80N07P
Keywords - AP80N10T MOSFET datasheet
AP80N10T cross reference
AP80N10T equivalent finder
AP80N10T lookup
AP80N10T substitution
AP80N10T replacement
