AP9N90F Specs and Replacement
Type Designator: AP9N90F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 206 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
AP9N90F substitution
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AP9N90F datasheet
ap9n90f ap9n90p ap9n90t.pdf
AP9N90FIPIT 900V N-Channel Enhancement Mode MOSFET Description The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. ... See More ⇒
Detailed specifications: AP80P06P , AP80P06T , AP80P10P , AP80P10T , AP85N08BP , AP85N08BT , AP90N06P , AP90N06T , 5N65 , AP9N90P , AP9N90T , AP110N04D , AP120N02D , AP120N03D , AP120N03NF , AP120N04D , AP120N08NF .
Keywords - AP9N90F MOSFET specs
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