AP9N90F Datasheet. Specs and Replacement

Type Designator: AP9N90F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 206 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

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AP9N90F datasheet

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AP9N90F

AP9N90FIPIT 900V N-Channel Enhancement Mode MOSFET Description The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. ... See More ⇒

Detailed specifications: AP80P06P, AP80P06T, AP80P10P, AP80P10T, AP85N08BP, AP85N08BT, AP90N06P, AP90N06T, 20N50, AP9N90P, AP9N90T, AP110N04D, AP120N02D, AP120N03D, AP120N03NF, AP120N04D, AP120N08NF

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