DMN4468LSS Datasheet and Replacement
Type Designator: DMN4468LSS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.95 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Qg ⓘ - Total Gate Charge: 18.85 nC
Cossⓘ - Output Capacitance: 867 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO8
DMN4468LSS substitution
DMN4468LSS Datasheet (PDF)
dmn4468lss.pdf
DMN4468LSSN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D
dmn4468lss-13.pdf
DMN4468LSS-13www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc
Datasheet: DMN32D2LDF , DMN32D2LFB4 , DMN32D2LV , DMN3300U , DMN3404L , DMN3730U , DMN3730UFB , DMN3730UFB4 , 8N60 , DMN4800LSS , DMN4800LSSL , DMS3016SFG , DMS3016SSSA , ZXM61N03F , ZXM62N03G , ZXMD63N03X , ZXMN3A01E6 .
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