AP3400BI MOSFET Datasheet: N-Ch, 30V, 5.8A. Full specification with pinout and replacement list

AP3400BI Specs and Replacement

Type Designator: AP3400BI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41.8 nS

Cossⓘ - Output Capacitance: 51.3 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT23

AP3400BI substitution

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AP3400BI datasheet

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AP3400BI 30V N-Channel Enhancement Mode MOSFET Description The AP3400BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒

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AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒