AP3400BI Datasheet PDF and Equivalents Search

 ..1. Size:1476K  cn apm
 ap3400bi.pdf

AP3400BI 30V N-Channel Enhancement Mode MOSFET Description The AP3400BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒

 8.1. Size:1869K  allpower
 ap3400.pdf

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 8.2. Size:1290K  allpower
 ap3400s.pdf

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 8.3. Size:1265K  cn apm
 ap3400mi-l.pdf

AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒

 8.4. Size:1143K  cn apm
 ap3400di.pdf

AP3400DI 20V N-Channel Enhancement Mode MOSFET Description The AP3400DI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS D R ... See More ⇒

 8.5. Size:2266K  cn apm
 ap3400ai.pdf

AP3400AI 30V N-Channel Enhancement Mode MOSFET Description The AP3400AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒

 8.6. Size:1232K  cn apm
 ap3400ci.pdf

AP3400CI 30V N-Channel Enhancement Mode MOSFET Description The AP3400CI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS D R ... See More ⇒

 8.7. Size:2282K  cn apm
 ap3400mi.pdf

AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒