All MOSFET. APG100N10D Datasheet

 

APG100N10D Datasheet and Replacement


   Type Designator: APG100N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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APG100N10D Datasheet (PDF)

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APG100N10D

APG100N10D 100V N-Channel Enhancement Mode MOSFET Description The APG100N10D uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =100A DS DR

Datasheet: AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , AP9P20D , IRF520 , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , AP7P15Y , AP80N02DF .

History: IRF7601 | AP9N20Y | 2SK3399

Keywords - APG100N10D MOSFET datasheet

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