All MOSFET. APG120N12NF Datasheet

 

APG120N12NF Datasheet and Replacement


   Type Designator: APG120N12NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 429 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: PDFN5X6-8L
 

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APG120N12NF Datasheet (PDF)

 ..1. Size:1614K  cn apm
apg120n12nf.pdf pdf_icon

APG120N12NF

APG120N12NF 100V N-SGT Enhancement Mode MOSFET Description The APG120N12NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =120 A DS DR

 6.1. Size:1308K  cn apm
apg120n10nf.pdf pdf_icon

APG120N12NF

APG120N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG120N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =120A DS DR

 7.1. Size:2679K  cn apm
apg120n04nf.pdf pdf_icon

APG120N12NF

APG120N04NF 40V N-SGT Enhancement Mode MOSFET General Description APG120N04NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un

 9.1. Size:3062K  cn apm
apg12n10d.pdf pdf_icon

APG120N12NF

APG12N10D 100V N-SGT Enhancement Mode MOSFET General Description APG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

Datasheet: AP9928A , AP9N20D , AP9N20P , AP9N20Y , AP9P20D , APG100N10D , APG110N10NF , APG120N10NF , AO3407 , APG130N06D , APG130N06NF , , , , , , .

History: FDBL86063-F085 | FDBL0240N100 | 2SJ72

Keywords - APG120N12NF MOSFET datasheet

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