All MOSFET. AP7P15Y Datasheet

 

AP7P15Y Datasheet and Replacement


   Type Designator: AP7P15Y
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
   Package: TO251
 

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AP7P15Y Datasheet (PDF)

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AP7P15Y

AP7P15Y -150V P-Channel Enhancement Mode MOSFET Description The AP7P15Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS DR

 8.1. Size:1317K  cn apm
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AP7P15Y

AP7P15D -150V P-Channel Enhancement Mode MOSFET Description The AP7P15D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS DR

Datasheet: AP9P20D , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , BS170 , AP80N02DF , AP80N02NF , AP80N03D , AP80N03DF , AP80N03NF , AP80N04D , AP80N04DF , AP80N06NF .

Keywords - AP7P15Y MOSFET datasheet

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