AP7P15Y PDF and Equivalents Search

 

AP7P15Y Specs and Replacement

Type Designator: AP7P15Y

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 23 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: TO251

AP7P15Y substitution

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AP7P15Y datasheet

 ..1. Size:1368K  cn apm
ap7p15y.pdf pdf_icon

AP7P15Y

AP7P15Y -150V P-Channel Enhancement Mode MOSFET Description The AP7P15Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS D R ... See More ⇒

 8.1. Size:1317K  cn apm
ap7p15d.pdf pdf_icon

AP7P15Y

AP7P15D -150V P-Channel Enhancement Mode MOSFET Description The AP7P15D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS D R ... See More ⇒

Detailed specifications: AP9P20D , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , AO4407A , AP80N02DF , AP80N02NF , AP80N03D , AP80N03DF , AP80N03NF , AP80N04D , AP80N04DF , AP80N06NF .

History: AP80N03D

Keywords - AP7P15Y MOSFET specs

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