AP80N02NF Specs and Replacement
Type Designator: AP80N02NF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 81 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37 nS
Cossⓘ -
Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: PDFN5X6-8L
- MOSFET ⓘ Cross-Reference Search
AP80N02NF datasheet
..1. Size:1135K cn apm
ap80n02nf.pdf 
AP80N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80A DS D R ... See More ⇒
7.1. Size:2217K cn apm
ap80n02df.pdf
AP80N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80 A DS D R ... See More ⇒
8.3. Size:175K ape
ap80n03gp.pdf
AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low... See More ⇒
8.9. Size:1395K cn apm
ap80n07f.pdf
AP80N07F 68V N-Channel Enhancement Mode MOSFET Description The AP80N07F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
8.10. Size:1548K cn apm
ap80n07p ap80n07t.pdf
AP80N07PIT 68V N-Channel Enhancement Mode MOSFET Description The AP80N07P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
8.11. Size:2631K cn apm
ap80n06d.pdf
AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS D R ... See More ⇒
8.12. Size:1459K cn apm
ap80n07d.pdf
AP80N07D 68V N-Channel Enhancement Mode MOSFET Description The AP80N07D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
8.13. Size:2440K cn apm
ap80n06nf.pdf
AP80N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP80N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80A DS D R ... See More ⇒
8.14. Size:1838K cn apm
ap80n03df.pdf
AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒
8.15. Size:1216K cn apm
ap80n03d.pdf
AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R ... See More ⇒
8.16. Size:1407K cn apm
ap80n04df.pdf
AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒
8.17. Size:1583K cn apm
ap80n03nf.pdf
AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒
8.18. Size:1651K cn apm
ap80n04d.pdf
AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒
8.19. Size:3601K cn apm
ap80n08nf.pdf
AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R ... See More ⇒
8.20. Size:2412K cn apm
ap80n08d.pdf
AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R ... See More ⇒
Detailed specifications: APG110N10NF
, APG120N10NF
, APG120N12NF
, APG130N06D
, APG130N06NF
, AP7P15D
, AP7P15Y
, AP80N02DF
, IRFP064N
, AP80N03D
, AP80N03DF
, AP80N03NF
, AP80N04D
, AP80N04DF
, AP80N06NF
, AP80N07D
, AP80N07F
.
History: HY3810M
Keywords - AP80N02NF MOSFET specs
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