ZXM61N03F MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXM61N03F
Marking Code: N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Qgⓘ - Total Gate Charge: 4.1 nC
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT23
ZXM61N03F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXM61N03F Datasheet (PDF)
zxm61n03f.pdf
ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03f.pdf
Product specificationZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT
zxm61n03fta.pdf
ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03ftc.pdf
ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n02f.pdf
ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n02f zxm61n02fta.pdf
Product specification20V N-CHANNEL ENHANCEMENT MODE MOSFETZXM61N02FSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT
zxm61n02ftc.pdf
ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n02fta.pdf
ZXM61N02FTAwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
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