ZXM61N03F. Аналоги и основные параметры

Наименование производителя: ZXM61N03F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A

Электрические характеристики

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm

Тип корпуса: SOT23

Аналог (замена) для ZXM61N03F

- подборⓘ MOSFET транзистора по параметрам

 

ZXM61N03F даташит

 ..1. Size:188K  diodes
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ZXM61N03F

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 ..2. Size:116K  tysemi
zxm61n03f.pdfpdf_icon

ZXM61N03F

Product specification ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT

 0.1. Size:187K  zetex
zxm61n03fta.pdfpdf_icon

ZXM61N03F

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 0.2. Size:187K  zetex
zxm61n03ftc.pdfpdf_icon

ZXM61N03F

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

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