ZXM62N03G MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXM62N03G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Qgⓘ - Total Gate Charge: 9.6 nC
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT223

ZXM62N03G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXM62N03G Datasheet (PDF)

..1. Size:152K diodes
zxm62n03g.pdf

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

0.1. Size:150K zetex
zxm62n03gta.pdf

6.1. Size:147K zetex
zxm62n03e6ta.pdf

ZXM62N03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.11 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

7.1. Size:186K diodes
zxm62n02e6.pdf

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

7.2. Size:153K diodes
zxm62n02e6 2n02sot23-6.pdf