Справочник MOSFET. ZXM62N03G

 

ZXM62N03G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM62N03G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.7 A
   Cossⓘ - Выходная емкость: 380 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для ZXM62N03G

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXM62N03G Datasheet (PDF)

 ..1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N03G

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

 0.1. Size:150K  zetex
 zxm62n03gta.pdf pdf_icon

ZXM62N03G

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

 6.1. Size:147K  zetex
 zxm62n03e6ta.pdf pdf_icon

ZXM62N03G

ZXM62N03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.11 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 7.1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N03G

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DMN3730UFB , DMN3730UFB4 , DMN4468LSS , DMN4800LSS , DMN4800LSSL , DMS3016SFG , DMS3016SSSA , ZXM61N03F , NCEP15T14 , ZXMD63N03X , ZXMN3A01E6 , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K .

History: 2SK2682LS | 2SK3337W

 

 
Back to Top

 


 
.