AP15G03DF Specs and Replacement
Type Designator: AP15G03DF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 9.8 nC
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 131 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN3X3-8L
AP15G03DF substitution
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AP15G03DF datasheet
ap15g03df.pdf
AP15G03DF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =19.3A DS D R ... See More ⇒
ap15g03nf.pdf
AP15G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS D R ... See More ⇒
ap15g04nf.pdf
AP15G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP15G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =21A DS D R ... See More ⇒
Detailed specifications: AP80N07F, AP80P04D, AP80P04NF, AP80P06D, AP150N03D, AP150N03NF, AP150N04D, AP150P03NF, IRFB4110, AP15G03NF, AP15N02S, AP15N06S, AP15N10D, AP15N10D-L, AP15N10S, AP15N10Y, AP15N12D
Keywords - AP15G03DF MOSFET specs
AP15G03DF cross reference
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