AP50H06NF Specs and Replacement

Type Designator: AP50H06NF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN5X6-8L

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AP50H06NF datasheet

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AP50H06NF

AP50H06NF 60V N+N-Channel Enhancement Mode MOSFET Description The AP50H06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R ... See More ⇒

Detailed specifications: AP2312AI, AP2312MI, AP2313MI, AP2320MI, AP4N10MI, AP4N15MI, AP4P05MI, AP50G03GD, 13N50, AP50N03AD, AP50N03D, AP50N03DF, AP50N04D, AP50N05D, AP50N06D, AP50N06NF, AP50N10D

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