All MOSFET. AP50H06NF Datasheet

 

AP50H06NF Datasheet and Replacement


   Type Designator: AP50H06NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN5X6-8L
 

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AP50H06NF Datasheet (PDF)

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AP50H06NF

AP50H06NF 60V N+N-Channel Enhancement Mode MOSFET Description The AP50H06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS DR

Datasheet: AP2312AI , AP2312MI , AP2313MI , AP2320MI , AP4N10MI , AP4N15MI , AP4P05MI , AP50G03GD , 13N50 , AP50N03AD , AP50N03D , AP50N03DF , AP50N04D , AP50N05D , AP50N06D , AP50N06NF , AP50N10D .

History: AP9576GM-HF

Keywords - AP50H06NF MOSFET datasheet

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