AP50N20MP Datasheet and Replacement
Type Designator: AP50N20MP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 104
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 50
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 54
nS
Cossⓘ -
Output Capacitance: 355
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
TO247
-
MOSFET ⓘ Cross-Reference Search
AP50N20MP Datasheet (PDF)
..1. Size:1356K cn apm
ap50n20mp.pdf 
AP50N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP50N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge
9.1. Size:2440K cn apm
ap50n06nf.pdf
AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR
9.2. Size:824K cn apm
ap50n06p ap50n06t.pdf
AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR
9.3. Size:1589K cn apm
ap50n06bd ap50n06by.pdf
AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS DR
9.4. Size:1079K cn apm
ap50n03df.pdf
AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS DR
9.5. Size:2272K cn apm
ap50n06d.pdf
AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR
9.6. Size:1546K cn apm
ap50n10d.pdf
AP50N10D 100V N-Channel Enhancement Mode MOSFET Description The AP50N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =50A DS DR
9.7. Size:3648K cn apm
ap50n06df.pdf
AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR
9.8. Size:1666K cn apm
ap50n03ad.pdf
AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS DR
9.9. Size:973K cn apm
ap50n05d.pdf
AP50N05D 50V N-Channel Enhancement Mode MOSFET Description The AP50N05D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 50V I =50 A DS DR
9.10. Size:1736K cn apm
ap50n03s.pdf
AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR
9.11. Size:801K cn apm
ap50n10p.pdf
AP50N10P 100V N-Channel Enhancement Mode MOSFET Description The AP50N10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =50 A DS DR
9.12. Size:1600K cn apm
ap50n06y.pdf
AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS DR
9.13. Size:1965K cn apm
ap50n03d.pdf
AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR
9.14. Size:851K cn apm
ap50n04d.pdf
AP50N04D 40V N-Channel Enhancement Mode MOSFET Description The AP50N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =50 A DS DR
Datasheet: AP50N03D
, AP50N03DF
, AP50N04D
, AP50N05D
, AP50N06D
, AP50N06NF
, AP50N10D
, AP50N10P
, 2N7002
, , , , , , , , .
History: AP50N10D
| AP50N06NF
| AP50N05D
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