All MOSFET. AP8205A-21 Datasheet

 

AP8205A-21 Datasheet and Replacement


   Type Designator: AP8205A-21
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32.4 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TSSOP8
 

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AP8205A-21 Datasheet (PDF)

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AP8205A-21

AP8205A-21 20V N+N-Channel Enhancement Mode MOSFET Description The AP8205A-21 uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =6.5A DS DR

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AP8205A-21

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AP8205A-21

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AP8205A-21

AP8205S 20V N+N Channel Enhancement Mode MOSFET Description The AP8205S uses advanced trench technology to provide excellent R , low gate charge DS(ON)and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V, ID = 6A RDS(ON)

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Datasheet: AP50N04D , AP50N05D , AP50N06D , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , AP80P10D , IRFP450 , AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI , AP8N10MI .

History: AP85T08GP

Keywords - AP8205A-21 MOSFET datasheet

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