All MOSFET. AP8V06S Datasheet

 

AP8V06S Datasheet and Replacement


   Type Designator: AP8V06S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 97.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOP8
 

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AP8V06S Datasheet (PDF)

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AP8V06S

AP8V06S -60V P+P-Channel Enhancement Mode MOSFET Description The AP8V06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS DR

Datasheet: AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , 2N60 , AP90N02D , AP90N02NF , , , , , , .

History: AP90N02D | AP8N06SI | AP8P04S | AP8N10MI

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