AP8V06S Specs and Replacement

Type Designator: AP8V06S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 97.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SOP8

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AP8V06S datasheet

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 ap8v06s.pdf pdf_icon

AP8V06S

AP8V06S -60V P+P-Channel Enhancement Mode MOSFET Description The AP8V06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS D R ... See More ⇒

Detailed specifications: AP8814A, AP8H04DF, AP8H04S, AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S, SI2302, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D, AP16P01BF, AP16P02S, AP180N03D, AP180N04NF

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