All MOSFET. AP20G03GD Datasheet

 

AP20G03GD Datasheet and Replacement


   Type Designator: AP20G03GD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.8 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO252-4L
 

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AP20G03GD Datasheet (PDF)

 ..1. Size:1819K  cn apm
 ap20g03gd.pdf pdf_icon

AP20G03GD

AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS DR

 7.1. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G03GD

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS DR

 8.1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G03GD

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS DR

 8.2. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G03GD

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS DR

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - AP20G03GD MOSFET datasheet

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