AP20G03GD Specs and Replacement

Type Designator: AP20G03GD

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO252-4L

AP20G03GD substitution

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AP20G03GD datasheet

 ..1. Size:1819K  cn apm
 ap20g03gd.pdf pdf_icon

AP20G03GD

AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R ... See More ⇒

 7.1. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G03GD

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS D R ... See More ⇒

 8.1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G03GD

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS D R ... See More ⇒

 8.2. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G03GD

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS D R ... See More ⇒

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Detailed specifications: AP18N03D, AP18P20P, AP1N10I, AP200N04NF, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, IRFZ46N, AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF

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