AP20G03GD - аналоги и даташиты транзистора

 

AP20G03GD - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP20G03GD
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 131 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: TO252-4L
 

 Аналог (замена) для AP20G03GD

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP20G03GD Datasheet (PDF)

 ..1. Size:1819K  cn apm
 ap20g03gd.pdf pdf_icon

AP20G03GD

AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS DR

 7.1. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G03GD

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS DR

 8.1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G03GD

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS DR

 8.2. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G03GD

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 , AP200N10MP , AP200N15MP , AP200N15TLG1 , IRFZ46N , AP280N10MP , AP2N20MI , AP2N30MI , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF .

 

 
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