AP20G03GD. Аналоги и основные параметры

Наименование производителя: AP20G03GD

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 131 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm

Тип корпуса: TO252-4L

Аналог (замена) для AP20G03GD

- подборⓘ MOSFET транзистора по параметрам

 

AP20G03GD даташит

 ..1. Size:1819K  cn apm
 ap20g03gd.pdf pdf_icon

AP20G03GD

AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R

 7.1. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G03GD

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS D R

 8.1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G03GD

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS D R

 8.2. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G03GD

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP18N03D, AP18P20P, AP1N10I, AP200N04NF, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, IRFZ46N, AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF