AP300N04TLG5 Specs and Replacement
Type Designator: AP300N04TLG5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 1510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TOLLA-8L
AP300N04TLG5 substitution
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AP300N04TLG5 datasheet
ap300n04tlg5.pdf
AP300N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP300N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =300A DS D R ... See More ⇒
Detailed specifications: AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A, AP2P15MI, K2611, AP30G03GD, AP30H04DF, AP30H04NF, AP30N02D, AP30N03DF, AP30N06D, AP30N06DF, AP30N06Y
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