AP30H04DF MOSFET Datasheet: N-Ch, 40V, 30A. Full specification with pinout and replacement list

AP30H04DF Specs and Replacement

Type Designator: AP30H04DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PDFN3X3-8L

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AP30H04DF datasheet

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AP30H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS D R ... See More ⇒

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AP30H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS D R ... See More ⇒

9.1. Size:637K 1
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