All MOSFET. AP50P04DF Datasheet

 

AP50P04DF Datasheet and Replacement


   Type Designator: AP50P04DF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35.2 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN3X3-8L
 

 AP50P04DF substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP50P04DF Datasheet (PDF)

 ..1. Size:1489K  cn apm
 ap50p04df.pdf pdf_icon

AP50P04DF

AP50P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP50P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS DR

 6.1. Size:1674K  cn apm
 ap50p04d.pdf pdf_icon

AP50P04DF

AP50P04D -40V P-Channel Enhancement Mode MOSFET Description The AP50P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS DR

 8.1. Size:2802K  cn apm
 ap50p02df.pdf pdf_icon

AP50P04DF

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D6.8m) R

 8.2. Size:1281K  cn apm
 ap50p03d.pdf pdf_icon

AP50P04DF

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

SHOW MORE

Datasheet: AP30N06D , AP30N06DF , AP30N06Y , AP30N10D , AP50P03D , AP50P03DF , AP50P03NF , AP50P04D , 20N60 , AP50P10D , AP50P10NF , AP50P10P , AP55N10F , AP5N04MI , AP5N06MI , AP5N10BI , AP5N10BSI .

Keywords - AP50P04DF MOSFET datasheet

 AP50P04DF cross reference
 AP50P04DF equivalent finder
 AP50P04DF lookup
 AP50P04DF substitution
 AP50P04DF replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.