AP50P04DF - описание и поиск аналогов

 ..1. Size:1489K  cn apm
 ap50p04df.pdf 

AP50P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP50P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

 6.1. Size:1674K  cn apm
 ap50p04d.pdf 

AP50P04D -40V P-Channel Enhancement Mode MOSFET Description The AP50P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

 8.1. Size:800K  allpower
 ap50p06k.pdf 

 8.2. Size:2802K  cn apm
 ap50p02df.pdf 

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D 6.8m ) R

 8.3. Size:1281K  cn apm
 ap50p03d.pdf 

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R

 8.4. Size:1388K  cn apm
 ap50p03df.pdf 

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS D R

 8.5. Size:1575K  cn apm
 ap50p06p ap50p06t.pdf 

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS D R

 8.6. Size:1629K  cn apm
 ap50p03nf.pdf 

AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R