AP5N06MI Specs and Replacement

Type Designator: AP5N06MI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

AP5N06MI substitution

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AP5N06MI datasheet

 ..1. Size:1567K  cn apm
 ap5n06mi.pdf pdf_icon

AP5N06MI

AP5N06MI 60V N-Channel Enhancement Mode MOSFET Description The AP5N06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =5A DS D R ... See More ⇒

 9.1. Size:886K  cn apm
 ap5n04mi.pdf pdf_icon

AP5N06MI

AP5N04MI 40V N-Channel Enhancement Mode MOSFET Description The AP5N04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =5.0A DS D R ... See More ⇒

Detailed specifications: AP50P03NF, AP50P04D, AP50P04DF, AP50P10D, AP50P10NF, AP50P10P, AP55N10F, AP5N04MI, IRF640, AP5N10BI, AP5N10BSI, AP5N10MI, AP5N10SI, AP6N10MI, AP6N12MI, AP6N40D, AP6P03SI

Keywords - AP5N06MI MOSFET specs

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