All MOSFET. AP5N06MI Datasheet

 

AP5N06MI Datasheet and Replacement


   Type Designator: AP5N06MI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

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AP5N06MI Datasheet (PDF)

 ..1. Size:1567K  cn apm
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AP5N06MI

AP5N06MI 60V N-Channel Enhancement Mode MOSFET Description The AP5N06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =5A DS DR

 9.1. Size:886K  cn apm
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AP5N06MI

AP5N04MI 40V N-Channel Enhancement Mode MOSFET DescriptionThe AP5N04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =5.0A DS DR

Datasheet: AP50P03NF , AP50P04D , AP50P04DF , AP50P10D , AP50P10NF , AP50P10P , AP55N10F , AP5N04MI , IRFZ44 , AP5N10BI , AP5N10BSI , AP5N10MI , AP5N10SI , , , , .

History: AP55N10F | AP5N04MI | AP5N10BSI | AP5N10SI | AP5N10BI | AP5N10MI

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