AP20G06GD Specs and Replacement

Type Designator: AP20G06GD

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.2 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO252-4L

AP20G06GD substitution

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AP20G06GD datasheet

 ..1. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G06GD

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS D R ... See More ⇒

 8.1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G06GD

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS D R ... See More ⇒

 8.2. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G06GD

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS D R ... See More ⇒

 8.3. Size:1819K  cn apm
 ap20g03gd.pdf pdf_icon

AP20G06GD

AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R ... See More ⇒

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Detailed specifications: AP70N12D, AP70N12NF, AP70P02D, AP70P03D, AP70P03DF, AP20G03NF, AP20G04GD, AP20G04NF, IRF9540N, AP20H02S, AP20H03NF, AP20H04NF, AP20N02BF, AP20N02DF, AP20N03D, AP20N06BD, AP20N06D

Keywords - AP20G06GD MOSFET specs

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