AP20G06GD. Аналоги и основные параметры

Наименование производителя: AP20G06GD

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 34.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14.2 ns

Cossⓘ - Выходная емкость: 86 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm

Тип корпуса: TO252-4L

Аналог (замена) для AP20G06GD

- подборⓘ MOSFET транзистора по параметрам

 

AP20G06GD даташит

 ..1. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G06GD

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS D R

 8.1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G06GD

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS D R

 8.2. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G06GD

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS D R

 8.3. Size:1819K  cn apm
 ap20g03gd.pdf pdf_icon

AP20G06GD

AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP70N12D, AP70N12NF, AP70P02D, AP70P03D, AP70P03DF, AP20G03NF, AP20G04GD, AP20G04NF, IRF9540N, AP20H02S, AP20H03NF, AP20H04NF, AP20N02BF, AP20N02DF, AP20N03D, AP20N06BD, AP20N06D