ZXMN3B04N8 MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXMN3B04N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 8.9 A
   Qgⓘ - Total Gate Charge: 23.1 nC
   Cossⓘ - Output Capacitance: 2480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8

ZXMN3B04N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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