SSC8415GS6 Specs and Replacement

Type Designator: SSC8415GS6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 12 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23

SSC8415GS6 substitution

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SSC8415GS6 datasheet

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SSC8415GS6

SSC8415GS6 P-Channel Enhancement Mode MOSFET Features Applications Load Switch V V R TYP I Portable Devices DS GS DSon D DCDC conversion 35mR@-4V5 Pin Configuration -20V 12V 44mR@-2V5 -4A Top View 57mR@-1V8 General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistan... See More ⇒

Detailed specifications: AP20N02BF, AP20N02DF, AP20N03D, AP20N06BD, AP20N06D, AP20N06S, AP20N10D, AP20P01BF, 12N60, SSC8K21GN3, SSC8K23GN2, SSC8P20AN2, SSC8P22AN3, SSC8P22CN2, AP3410MI, AP3415A, AP35H04NF

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