All MOSFET. SSC8415GS6 Datasheet

 

SSC8415GS6 Datasheet and Replacement


   Type Designator: SSC8415GS6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 12 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23
 

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SSC8415GS6 Datasheet (PDF)

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SSC8415GS6

SSC8415GS6P-Channel Enhancement Mode MOSFET Features Applications Load SwitchV V R TYP I Portable DevicesDS GS DSon D DCDC conversion35mR@-4V5 Pin Configuration-20V 12V 44mR@-2V5 -4ATop View57mR@-1V8 General DescriptionThis device is produced with high cell density DMOStrench technology, which is especially used to minimizeon-state resistan

Datasheet: AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , AP20N06S , AP20N10D , AP20P01BF , IRF1010E , SSC8K21GN3 , SSC8K23GN2 , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 , , , .

History: SSC8K23GN2 | SSC8P20AN2 | SSC8P22CN2 | SSC8K21GN3

Keywords - SSC8415GS6 MOSFET datasheet

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