All MOSFET. SSC8P20AN2 Datasheet

 

SSC8P20AN2 Datasheet and Replacement


   Type Designator: SSC8P20AN2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 6 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: DFN2X2
 

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SSC8P20AN2 Datasheet (PDF)

 ..1. Size:718K  afsemi
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SSC8P20AN2

SSC8P20AN2 SSC8P20AN2 N-Channel Enhancement Mode MOSFET with PNP Transistor Features Pin configuration N-Channel Top view VDS VGS RDSON Typ. ID 255mR@4V5 20V 8V 0.8A 390mR@2V5 PNP Transistor VCE VBE VCESAT Typ. IC -40V -6V -200mV -1A Description SSC8P20AN2 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density

 8.1. Size:356K  afsemi
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SSC8P20AN2

SSC8P22CN2 N-Channel Enhancement Mode MOSFET Features Applications Li Battery Charging PNP Transistor VCE VBE Vcesat max Ic -40v -6v -200mv -3.0A Pin configuration General Description SSC8P22CN2 combines an N-Channel enhancement mode Pin configuration(Top view) MOSFET and a Media Power PNP Transistor. The tiny and thin outline saves PCB consumption.

 8.2. Size:780K  afsemi
 ssc8p22an3.pdf pdf_icon

SSC8P20AN2

SSC8P22AN3 SSC8P22AN3 N-Channel Enhancement Mode MOSFET with PNP Transistor Features Pin configuration N-Channel Top view VDS VGS RDSON Typ. ID 255mR@4V5 20V 8V 0.8A 390mR@2V5 PNP Transistor VCE VBE VCESAT Typ. IC -40V -6V -150mV -3A Description SSC8P22AN3 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density

Datasheet: AP20N06BD , AP20N06D , AP20N06S , AP20N10D , AP20P01BF , SSC8415GS6 , SSC8K21GN3 , SSC8K23GN2 , IRF1407 , SSC8P22AN3 , SSC8P22CN2 , , , , , , .

History: SSC8K21GN3 | SSC8P22CN2

Keywords - SSC8P20AN2 MOSFET datasheet

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