ZXMN3B14F MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN3B14F
Marking Code: 3B14
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 3.5 A
Drain-Source Capacitance (Cd): 568 pF
Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm
Package: SOT23
ZXMN3B14F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN3B14F Datasheet (PDF)
1.1. zxmn3b14fta.pdf 
Size:215K _upd-mosfet
ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES PACKAGE • Low o
1.2. zxmn3b14f.pdf Size:217K _diodes
ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES PACKAGE Low on-res
1.3. zxmn3b14f.pdf Size:79K _tysemi
Product specification ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES
Datasheet: ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , 2SK4106 , ZXMN3F30FH , ZXMN3F318DN8 , ZXMN3F31DN8 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A , STU442S , 2N7002E .
