ZXMN3B14F. Аналоги и основные параметры

Наименование производителя: ZXMN3B14F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A

Электрические характеристики

Cossⓘ - Выходная емкость: 568 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm

Тип корпуса: SOT23

Аналог (замена) для ZXMN3B14F

- подборⓘ MOSFET транзистора по параметрам

 

ZXMN3B14F даташит

 ..1. Size:217K  diodes
 zxmn3b14f.pdf pdf_icon

ZXMN3B14F

ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES PACKAGE Low o

 ..2. Size:79K  tysemi
 zxmn3b14f.pdf pdf_icon

ZXMN3B14F

Product specification ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

 0.1. Size:215K  zetex
 zxmn3b14fta.pdf pdf_icon

ZXMN3B14F

ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES PACKAGE Low o

 8.1. Size:469K  diodes
 zxmn3b01f.pdf pdf_icon

ZXMN3B14F

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re

ПОКАЗАТЬ ЕЩЁ

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