Справочник MOSFET. ZXMN3B14F

 

ZXMN3B14F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3B14F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Cossⓘ - Выходная емкость: 568 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для ZXMN3B14F

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMN3B14F Datasheet (PDF)

 ..1. Size:217K  diodes
 zxmn3b14f.pdf pdf_icon

ZXMN3B14F

ZXMN3B14F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESPACKAGE Low o

 ..2. Size:79K  tysemi
 zxmn3b14f.pdf pdf_icon

ZXMN3B14F

Product specificationZXMN3B14F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

 0.1. Size:215K  zetex
 zxmn3b14fta.pdf pdf_icon

ZXMN3B14F

ZXMN3B14F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESPACKAGE Low o

 8.1. Size:469K  diodes
 zxmn3b01f.pdf pdf_icon

ZXMN3B14F

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , AO3407 , ZXMN3F30FH , ZXMN3F318DN8 , ZXMN3F31DN8 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A , STU442S , 2N7002E .

History: 2SK1728 | 20N3LG-TO251

 

 
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