AP40H10NF Datasheet. Specs and Replacement

Type Designator: AP40H10NF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 185.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN5X6-8L

AP40H10NF substitution

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AP40H10NF datasheet

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AP40H10NF

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AP40H10NF

AP40H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP40H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =40A DS D R ... See More ⇒

Detailed specifications: AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI, AP3P10MI, AP3P10S, AP40G03NF, AP40H04NF, RFP50N06, ATM06P50TC, ATM10N10SQ, ATM10N65TF, ATM1205PSI, ATM2300NSA, ATM2301PSC, ATM2302NSA, ATM2305PSA

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