All MOSFET. AP7N50D Datasheet

 

AP7N50D Datasheet and Replacement


   Type Designator: AP7N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252
 

 AP7N50D substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP7N50D Datasheet (PDF)

 ..1. Size:1348K  cn apm
 ap7n50d.pdf pdf_icon

AP7N50D

AP7N50D 500V N-Channel Enhancement Mode MOSFET Description The AP7N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

Datasheet: ATM3400NSA , ATM3401APSA , ATM3401PSA , AP6H03S , AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AO4468 , AP80P06NF , , , , , , , .

History: AP6H03S | AP80P06NF | AP70P03NF

Keywords - AP7N50D MOSFET datasheet

 AP7N50D cross reference
 AP7N50D equivalent finder
 AP7N50D lookup
 AP7N50D substitution
 AP7N50D replacement

 

 
Back to Top

 


 
.