All MOSFET. AP7N50D Datasheet

 

AP7N50D Datasheet and Replacement


   Type Designator: AP7N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252

 AP7N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP7N50D Datasheet (PDF)

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AP7N50D

AP7N50D 500V N-Channel Enhancement Mode MOSFET Description The AP7N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

Datasheet: ATM3400NSA , ATM3401APSA , ATM3401PSA , AP6H03S , AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AOD4184A , AP80P06NF , AP20P02BF , AP20P02D , AP20P02SI , AP20P03D , AP20P03DF , AP20P04D , AP220N08TLG1 .

History: AP80P06NF | AP6H03S | ATM3401PSA

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