AP7N50D Datasheet. Specs and Replacement

Type Designator: AP7N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO252

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AP7N50D datasheet

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AP7N50D

AP7N50D 500V N-Channel Enhancement Mode MOSFET Description The AP7N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒

Detailed specifications: ATM3400NSA, ATM3401APSA, ATM3401PSA, AP6H03S, AP6N03LI, AP6N03SI, AP6N04SI, AP70P03NF, AOD4184A, AP80P06NF, AP20P02BF, AP20P02D, AP20P02SI, AP20P03D, AP20P03DF, AP20P04D, AP220N08TLG1

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