All MOSFET. 2N6766JANTXV Datasheet

 

2N6766JANTXV MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6766JANTXV

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO204

2N6766JANTXV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6766JANTXV Datasheet (PDF)

4.1. 2n6766 irf250.pdf Size:145K _international_rectifier

2N6766JANTXV
2N6766JANTXV

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFETTRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085Ω 30A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique

4.2. 2n6764 2n6766 2n6768 2n6770.pdf Size:64K _omnirel

2N6766JANTXV
2N6766JANTXV

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/543 DESCRIPTION

 5.1. 2n6762.pdf Size:137K _update-mosfet

2N6766JANTXV
2N6766JANTXV



5.2. 2n6760.pdf Size:138K _update-mosfet

2N6766JANTXV
2N6766JANTXV



 5.3. 2n6769.pdf Size:137K _fairchild_semi

2N6766JANTXV
2N6766JANTXV



5.4. 2n6767.pdf Size:140K _fairchild_semi

2N6766JANTXV
2N6766JANTXV



 5.5. 2n6765.pdf Size:142K _fairchild_semi

2N6766JANTXV
2N6766JANTXV



5.6. 2n6759 2n6760.pdf Size:138K _fairchild_semi

2N6766JANTXV
2N6766JANTXV



5.7. 2n6763.pdf Size:140K _fairchild_semi

2N6766JANTXV
2N6766JANTXV



5.8. 2n6761 2n6762.pdf Size:137K _fairchild_semi

2N6766JANTXV
2N6766JANTXV



5.9. 2n6768 irf350.pdf Size:144K _international_rectifier

2N6766JANTXV
2N6766JANTXV

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFETTRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300Ω 14A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique proces

5.10. 2n6760 irf330.pdf Size:146K _international_rectifier

2N6766JANTXV
2N6766JANTXV

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFETTRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00Ω 5.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique proces

5.11. 2n6762 irf430.pdf Size:146K _international_rectifier

2N6766JANTXV
2N6766JANTXV

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFETTRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 Ω 4.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique proces

Datasheet: 2N6764JANTX , 2N6764JANTXV , 2N6764JTX , 2N6764JTXV , 2N6765 , 2N6766 , 2N6766JAN , 2N6766JANTX , 2N3824 , 2N6766JTX , 2N6766JTXV , 2N6767 , 2N6768 , 2N6768JAN , 2N6768JANTX , 2N6768JANTXV , 2N6768JTX .

 

 
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