AP25N04D Datasheet. Specs and Replacement

Type Designator: AP25N04D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.1 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO252

AP25N04D substitution

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AP25N04D datasheet

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AP25N04D

AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS D R ... See More ⇒

 7.1. Size:1696K  cn apm
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AP25N04D

AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS D R ... See More ⇒

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AP25N04D

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AP25N04D

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Detailed specifications: AP20P03DF, AP20P04D, AP220N08TLG1, AP220N10MP, AP2222D, AP25G02NF, AP25G03GD, AP25G04GD, IRFP460, AP25N04S, AP4406A, AP4406B, AP4407A, AP4407B, AP4409A, AP4435A, AP4435B

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