AP25N04D Datasheet. Specs and Replacement
Type Designator: AP25N04D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO252
AP25N04D substitution
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AP25N04D datasheet
ap25n04d.pdf
AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS D R ... See More ⇒
ap25n04s.pdf
AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS D R ... See More ⇒
Detailed specifications: AP20P03DF, AP20P04D, AP220N08TLG1, AP220N10MP, AP2222D, AP25G02NF, AP25G03GD, AP25G04GD, IRFP460, AP25N04S, AP4406A, AP4406B, AP4407A, AP4407B, AP4409A, AP4435A, AP4435B
Keywords - AP25N04D MOSFET specs
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History: AP25N04S | 2SJ600-Z | AP25G03GD
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