AP5N40D Datasheet and Replacement
Type Designator: AP5N40D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 54.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252
AP5N40D substitution
AP5N40D Datasheet (PDF)
..1. Size:1385K cn apm
ap5n40d.pdf
ap5n40d.pdf
AP5N40D 400V N-Channel Enhancement Mode MOSFET Description The AP5N40D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera
Datasheet: AP4409A , AP4435A , AP4435B , AP45P06D , AP45P06NF , AP4606C , AP4953A , AP4953B , IRFP250N , AP5N50BD , AP5N50D , , , , , , .
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