ATM3407PSA Datasheet: MOSFET, P-Ch, 30V, 3.7A. Full specification with pinout and replacement list

ATM3407PSA Datasheet. Specs and Replacement

Type Designator: ATM3407PSA 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

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ATM3407PSA substitution

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ATM3407PSA datasheet

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ATM3407PSA P-Channel Enhancement Mode Field Effect Transistor Feature Description V (V) = -30V DS The ATM3407PSA uses advanced trench technology I = -3.7 A (V =-10V) D GS to provide excellent R , low gate charge and DS(ON) R ... See More ⇒

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ATM3400ANSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 5.8A FEATURES SOT-23 Trench FET Power MOSFET R ... See More ⇒

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ATM3401PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -30V Drain Current -4.2A Features Trench FET Power MOSFET Exceptional on-resistance and maximum DC current capability R ... See More ⇒

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ATM3404NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 5A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R ... See More ⇒