ATM6402NSA Datasheet. Specs and Replacement

Type Designator: ATM6402NSA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.6 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOT23

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ATM6402NSA datasheet

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ATM6402NSA

ATM6402NSA N-Channel Enhancement Mode Field Effect Transistor Description Feature The ATM6402NSA uses advanced trench technology V (V) = 30V DS to provide excellent R , low gate charge and DS(ON) I = 6.1A (V = 10V) D GS operation with gate voltages as low as 4.5V. This R ... See More ⇒

Detailed specifications: AP4606C, AP4953A, AP4953B, AP5N40D, AP5N50BD, AP5N50D, ATM3407PSA, ATM3415KPSA, IRF630, ATM7414NDH, ATM7N65ATE, ATM8205DNPD, ATM8205DNSG, ATM9435PPA, AP60P03D, AP65N03DF, AP65N04DF

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