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ATM6402NSA Spec and Replacement


   Type Designator: ATM6402NSA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.6 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT23

 ATM6402NSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATM6402NSA Specs

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ATM6402NSA

ATM6402NSA N-Channel Enhancement Mode Field Effect Transistor Description Feature The ATM6402NSA uses advanced trench technology V (V) = 30V DS to provide excellent R , low gate charge and DS(ON) I = 6.1A (V = 10V) D GS operation with gate voltages as low as 4.5V. This R ... See More ⇒

Detailed specifications: AP4606C , AP4953A , AP4953B , AP5N40D , AP5N50BD , AP5N50D , ATM3407PSA , ATM3415KPSA , IRF630 , ATM7414NDH , ATM7N65ATE , ATM8205DNPD , ATM8205DNSG , ATM9435PPA , AP60P03D , AP65N03DF , AP65N04DF .

History: IRFI3205 | TK5P65W | NCEP40ND80G

Keywords - ATM6402NSA MOSFET specs

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