AP68N04DF Spec and Replacement
Type Designator: AP68N04DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 193 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN3X3-8L
AP68N04DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP68N04DF Specs
ap68n04df.pdf
AP68N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04DF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒
ap68n04nf.pdf
AP68N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒
Detailed specifications: ATM7N65ATE , ATM8205DNPD , ATM8205DNSG , ATM9435PPA , AP60P03D , AP65N03DF , AP65N04DF , AP65N06NF , K3569 , AP68N04NF , AP6946A , AP6G03LI , AP260N12TLG1 , AP30N10Y , AP30N15D , AP30N20P , AP30P01DF .
Keywords - AP68N04DF MOSFET specs
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