AP68N04DF Datasheet. Specs and Replacement
Type Designator: AP68N04DF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 193 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN3X3-8L
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AP68N04DF datasheet
ap68n04df.pdf
AP68N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04DF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒
ap68n04nf.pdf
AP68N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒
Detailed specifications: ATM7N65ATE, ATM8205DNPD, ATM8205DNSG, ATM9435PPA, AP60P03D, AP65N03DF, AP65N04DF, AP65N06NF, K3569, AP68N04NF, AP6946A, AP6G03LI, AP260N12TLG1, AP30N10Y, AP30N15D, AP30N20P, AP30P01DF
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