AP40P02D Datasheet. Specs and Replacement
Type Designator: AP40P02D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 242 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
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AP40P02D datasheet
..1. Size:1323K cn apm
ap40p02d.pdf 
AP40P02D -20V P-Channel Enhancement Mode MOSFET Description The AP40P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-40A DS D R Type 12m @ V =-4.5V DS(ON) GS Appli... See More ⇒
8.1. Size:95K ape
ap40p03gi-hf.pdf
AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒
8.2. Size:216K ape
ap40p03gh.pdf
AP40P03GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt... See More ⇒
8.3. Size:216K ape
ap40p03gh-hf ap40p03gj-hf.pdf
AP40P03GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications an... See More ⇒
8.4. Size:166K ape
ap40p03gi.pdf
AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description AP40P03 series are from Advanced Power innova... See More ⇒
8.5. Size:117K ape
ap40p03gp.pdf
AP40P03GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resist... See More ⇒
8.10. Size:846K cn vbsemi
ap40p03gh.pdf
AP40P03GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET A... See More ⇒
8.11. Size:809K cn vbsemi
ap40p03gj.pdf
AP40P03GJ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To... See More ⇒
8.12. Size:1350K cn apm
ap40p04df.pdf
AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒
8.13. Size:1491K cn apm
ap40p04nf.pdf
AP40P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒
8.14. Size:1441K cn apm
ap40p04d.pdf
AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒
8.15. Size:1150K cn apm
ap40p03df.pdf
AP40P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP40P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-40A DS D R ... See More ⇒
Detailed specifications: AP30N20P, AP30P01DF, AP30P02DF, AP30P03D, AP40N02D, AP40N03S, AP40N10P, AP40N20MP, NCEP15T14, AP40P03DF, AP40P04D, AP40P04DF, AP40P04NF, AP5P04MI, AP5P06MSI, AP60N02D, AP60N02DF
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