AP40P02D datasheet, подбор замены

 ..1. Size:1323K  cn apm
 ap40p02d.pdf 

AP40P02D -20V P-Channel Enhancement Mode MOSFET Description The AP40P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-40A DS D R Type 12m @ V =-4.5V DS(ON) GS Appli

 8.1. Size:95K  ape
 ap40p03gi-hf.pdf 

AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 8.2. Size:216K  ape
 ap40p03gh.pdf 

AP40P03GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt

 8.3. Size:216K  ape
 ap40p03gh-hf ap40p03gj-hf.pdf 

AP40P03GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications an

 8.4. Size:166K  ape
 ap40p03gi.pdf 

AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description AP40P03 series are from Advanced Power innova

 8.5. Size:117K  ape
 ap40p03gp.pdf 

AP40P03GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resist

 8.6. Size:606K  allpower
 ap40p04g.pdf 

 8.7. Size:638K  allpower
 ap40p04q.pdf 

 8.8. Size:762K  allpower
 ap40p05.pdf 

 8.9. Size:670K  allpower
 ap40p04k.pdf 

 8.10. Size:846K  cn vbsemi
 ap40p03gh.pdf 

AP40P03GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET A

 8.11. Size:809K  cn vbsemi
 ap40p03gj.pdf 

AP40P03GJ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To

 8.12. Size:1350K  cn apm
 ap40p04df.pdf 

AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

 8.13. Size:1491K  cn apm
 ap40p04nf.pdf 

AP40P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

 8.14. Size:1441K  cn apm
 ap40p04d.pdf 

AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

 8.15. Size:1150K  cn apm
 ap40p03df.pdf 

AP40P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP40P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-40A DS D R